Magneto-ionics is an emerging field that offers great potential for reducing power consumption in spintronics memory applications through non-volatile gate-control of magnetic properties. By combining voltage-controlled ionic motion from memristor technologies, typically used in neuromorphic applications, with spintronics, magneto-ionics also provides a platform to create a new generation of neuromorphic computing functionalities based on spintronics devices. Our group has been at the forefront of investigating the magneto-ionic control of magnetic properties in various materials and nanodevice geometries. We have demonstrated gating effects on magnetic anisotropy and the Dzyaloshinskii–Moriya interaction and characterised in depth the interactions between the mobile ions and the magnetic atoms. One major challenge remains ahead for the use of magneto-ionics in practical applications, its integration into magnetic tunnel junctions (MTJ), the building blocks of magnetic memory architectures. This will not only unlock the dynamic control of switching currents in magnetic tunnel junctions to reduce power consumption in memory technologies, but also allow for the modulation of stochastic magnetisation switching, which has important implications in probabilistic computing. We are currently seeking a highly motivated candidate to join our team at C2N and work on an experimental research project focused on the implementation of magneto-ionic gating schemes in MTJs.