Topological Insulators (TIs) hold great promise for making novel electronic devices, thanks to the existence at their boundaries of topologically protected conduction channels. Due to strong correlation of electrons spin and momentum, backscattering is prevented leading to ballistic transport. These edge states thus constitute highway for electrons. Unfortunately, the expected topological protection has turned out to be less robust than anticipated, notably due to the existence of conduction in the bulk. This complicates the fundamental study of the edge states, and motivates the search for different Tis. During this internship/PhD, we will explore more recently discovered topological materials that are better suited to the discovery of 1D states, because they have fewer trivial states or their topological character is tunable. This is the case of Bi4Br4, a second TI with high bulk gap and WTe2 in the few layer limit. The internship/PhD will involve nanofabrication and quantum transport experiments at low temperature.