In this internship we will fabricate coupled quantum dots, where the two dots are close enough that carriers can tunnel coherently between them. We will do this using molecular beam epitaxy, a thin-film growth technique, which allows precise control of layer thicknesses and composition. These dots will be embedded in diode structures allowing a field to applied across the dots, bringing their energy levels into resonance to create delocalised electronic states. The student will have the opportunity to participate in all the stages of development of a new quantum device: from device design, thin film growth and device fabrication to the low temperature photoluminescence measurements of quantum confinement effects.