The wall-plug efficiency (WPE) of LEDs is defined as the output optical power per unit input electrical power. Today, blue-emitting, III-nitride LEDs exhibit WPEs > 90 %. However, as the In content in InGaN quantum well alloys is increased in order to produce LEDs emitting at longer wavelengths, WPE drops precipitously. On-going efforts in academic & industrial research laboratories seek to improve WPEs of long-wavelength III-nitride LEDs with the goal being to produce efficient white-light emitters. Success would have major technological & economic advantages in lighting and micro-LED screen applications. Recently, record-high WPE in green- and yellow-emitting nitride LEDs were obtained in devices containing crystalline defects known as a V-pits. The mechanism which yields this significantly improved WPE is only just becoming clear thanks to our us -- lower internal potential barriers arising at semi-polar V-pit facets facilitate charge injection into the active zone of the LED. The intern will study the effect on WPE of electrical injection through semi-polar and non-polar crystal facets of commercially viable III-nitride LED heterostructures using the scanning, tunneling tip of the STLM as a nanoscale electrode for charge injection into one side of the LED. The candidate will work with heterostructures & devices sourced through our collaborators & industry partner in France, the US, and Asia.