This Master’s internship offers a unique opportunity to dive into the frontiers of quantum nanophotonics and condensed matter physics. Hosted at the Institut des NanoSciences de Paris, the project focuses on GaAs/AlAs type-II quantum dots, grown via nanohole infilling, a technique that yields exceptionally well-controlled nanostructures. These quantum dots are special: they can host two distinct excitons : a direct exciton confined in the GaAs dot, and an indirect exciton where the electron occupies the X-valley of the AlAs barrier, far from the hole. By applying a gate voltage, you can tune the interaction (hybridization) between them, observing anti-crossings that signal inter-valley coupling, a fundamental quantum mechanical process. The goal of the internship is to actively control this coupling, which depends both on atomic-scale interface properties and on carrier density. To do so, you’ll implement an in-plane magnetic field (Voigt configuration), squeezing the electron wavefunction and modifying its interaction with the interface. This tunability not only advances our understanding of valley physics, but may also allow you to explore Aharonov–Bohm-like oscillations, a hallmark of quantum coherence in mesoscopic systems.