The project focuses on the study of superconducting devices with silicon as a semiconductor. Those include standard silicon transistors with superconducting source and drain contacts and superconducting resonators. The common properties is the superconducting material which is elaborated with the constrain of being compatible with the silicon CMOS technology. In the actual situation of the project, devices with CoSi2, PtSi and Si:B superconducting contacts have been fabricated using the 300 mm clean room facility at the LETI and in collaboration with our partners at Uppsala university and C2N Paris Saclay. The main issue is now to characterize the electronic transport properties at very low temperature. Depending on the quality of the contact interface between the S/D contacts and the silicon channel, various behavior are expected. In the case of opaque contacts, the current at very low S/D bias is blocked due to the opening of the superconducting gap. In the opposite case, superconducting correlations extend in the channel and a gate-tunable non-dissipative supercurrent is expected to flow though the transistors. This situation, met for other materials like germanium (see other master project on protected qubit ), is the ultimate goal of the project. The master internship will focus on measurements at very low temperature of existing devices.